Andrea Cester

Assistant Professor
Department of Information Engineering, University of Padova
via gradenigo 6B, 35131, Padova (Italy)
email: andrea.cester@dei.unipd.it
phone: +39 049 827 7787
fax: +39 049 827 7699
web: www.dei.unipd.it/~cester

Biography

Andrea Cester received the M.S. (magna cum laude) degree in electronics engineering in 1998, with a focus on the ionizing radiation effect on MOS devices. In 2002 he received the Ph.D. degree in electronic and telecommunication engineering from the University of Padova. His Ph.D. dissertation was focused on ultra-thin gate oxide CMOS device physics, technology, and reliability. Since December 2002, he has been with the Department of Information Engineering, University of Padova, as an Assistant Professor. Since December 2014 he become Associate Professor.
He is the author or a coauthor of more than 160 papers published in international journals and conference proceedings.
His research activities ranges over a wide variety of subject. Among them: the characterization, reliability study, and modeling of organic electronic materials and devices (from thin-film transistors to organic light-emitting diodes, and organic solar cells); the characterization, modeling and reliability of photovoltaic devices, including both silicon technologies and novel solar cell structures (thin film, organic etc.); the electrical characterization, modeling, and reliability of RF-MEMS switches for reconfigurable antenna arrays; and the characterization and reliability study of novel high-mobility MOS transistors on III–V semiconductor substrate. His research interests also included reliability issues of deep submicrometer CMOS technology, breakdown and hot electron degradation of ultrathin gate oxide MOS structures, effects of ionizing radiation on ultrathin gate oxides, electrical characterization, reliability, and radiation effects of submicrometer and decananometer bulk and SOI CMOS devices, the impact of oxide degradation and breakdown on device and circuit performance and functionality, electrostatic discharge effects on the breakdown, reliability, and performance of CMOS devices, and ionizing radiation effects in novel nonvolatile memory devices (nanocrystal memory, ferroelectric memory, and phase change memory).
He is Senior Member of IEEE, member of the IEEE Electron Devices Society and IEEE Nuclear and Plasma Sciences Society.
He is supporting the teaching activity within the electronic area at University of Padova. He is the official teacher for the Organic and Molecular Electronics course.

Gaudenzio Meneghesso

Full Professor
Department of Information Engineering, University of Padova
via gradenigo 6B, 35131, Padova (Italy)
email: gaudenzio.meneghesso@dei.unipd.it
phone: +39 049 827 7653
fax: +39 049 827 7699
web: www.dei.unipd.it/~gauss

Biography

Gaudenzio Meneghesso was born in Padova, Italy, in 1967. He received the Electronics Engineering degree, working on the failure mechanism induced by hot electrons in MESFETs and HEMTs, and the Ph.D. degree in electrical and telecommunication engineering, working on hot-electron characterization, effects, and reliability of GaAs- and InP-based HEMTs and pseudomorphic HEMTs, from the University of Padova, Padova, in 1992 and 1997, respectively.
In 1995, he was with the University of Twente, Enschede, The Netherlands, with a Human Capital and Mobility fellowship (within the SUSTAIN Network), working on the dynamic behavior of protection structures against electrostatic discharge (ESD).
Since 2002, he has been with the Department of Information Engineering, University of Padova as an Associate Professor. His research interests include electrical characterization, modeling, and reliability of microwave devices on III V semiconductors such as GaAs and InP (MESFETs, HEMTs, and PHEMTs); electrical characterization, modeling, and reliability of electronic and optoelectronic devices grown on wide bandgap semiconductors (SiC and GaN); electrical characterization, modeling, and reliability of RF-MEMS switches for reconfigurable antenna switches; and design, characterization, and modeling of ESD protection structures for CMOS and SMART POWER integrated circuits, including electromagnetic interference issues.
He is an Editor of the IEEE ELECTRON DEVICE LETTERS for the compound semiconductor devices area. He is a Reviewer of several international journals such as IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE ELECTRON DEVICE LETTERS, IEE Electronics Letters, Semiconductor Science and Technology, and Microelectronics Reliability (Elsevier).
He has been the Technical Program Chair of Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 2001, the General Chair of HETECH 2001, and the General Chair of WOCSDICE 2007. He served in the Technical Program Committee of several international conferences such as European MicrowaveWeek 2005 and 2006, IEEE International Reliability Physics Symposium 2005, 2006, and 2007, and Electrical Overstress/Electrostatic Discharge Symposium 2006. He served several years for the IEEE International Electron Devices Meeting. He was in the Quantum Electronics and Compound Semiconductors subcommittee as a member in 2003 and as Chair in 2004 and 2005. In 2006 and 2007, he was in the Executive Committee as the European Arrangements Chair.
He was the recipient of the Italian Telecom Award for his thesis work in 1993 and four Best Paper Awards at the 1996 and 1999 European Symposium on Reliability of Electron Devices,Failure Physics and Analysis Conference.

MOST - Molecular and Organic Semiconductor Technology
Microelectronic Group - University of Padova